SILAR Deposition of Sns Thin Films for Possible Device Applications

Joseph Ijeoma Onwuemeka, Doris Nwakaego Ndubueze, Hypolitus Nnamdi Onyema, Ngozi Patricia Ebosie, Uche Godswill Nwokeke, Chijioke Uzoma Opara, Bruno ChijinduAgbakwuru and Ikechukwu Ogu
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Joseph Ijeoma Onwuemeka: Department of Physics, Imo State University Owerri Nigeria
Doris Nwakaego Ndubueze: Department of Physics, Kingsley Ozurumba Mbadiwe University Ogboko, Nigeria
Hypolitus Nnamdi Onyema: Department of Physics, Imo State University Owerri Nigeria
Ngozi Patricia Ebosie: Department of Chemistry, Imo State University Owerri Nigeria
Uche Godswill Nwokeke: Department of Chemistry, Imo State University Owerri Nigeria
Chijioke Uzoma Opara: Departmen of Physics and Electronics, Federal Polytechnic, Nekede Owerri, Nigeria
Bruno ChijinduAgbakwuru: Departmen of Physics and Electronics, Federal Polytechnic, Nekede Owerri, Nigeria
Ikechukwu Ogu: Department of Physics, Imo State University Owerri Nigeria

International Journal of Latest Technology in Engineering, Management & Applied Science, 2024, vol. 13, issue 4, 193-198

Abstract: Successive Ionic Layer Adsorption and Reaction (SILAR) was used to deposit tin sulphide (SnS) thin films on glass substrates at temperature of 450C.Sodium thiosulphateNa2S2O3solution was used as the anionic precursor, tin chloride SnCl2 solution as the cationic precursor and EDTA as complexing agent. The samples were subjected to annealing at the temperature range of 2000C and 250oC). High transmittance values were obtained in both Samples C and D in the UV(70% -72%) and (75% - 89%) respectively atthe wavelength range of (350nm-400nm) which maintains linear characteristics through the visible to near infrared regions (NIR) of the electromagnetic spectrum. This high transmittance implies that it can be useful in the areas of solar energy and opto-electronic applications. The Energy band gap (Eg) is obtained using the relation (αhv)2= A (hv-Eg) where A is constant, hv is the photon energy, Eg is the energy band gap and α is the absorption coefficient. Direct band gap value of 2.90±0.05eV is obtained for sample C while a direct band gap of 2.70±0.05eV is obtained for sample D. The two samples have average band gap of 2.8±0.05eV.

Date: 2024
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