New Boron Deposition Model Based on Thin Oxide Film in Process of High Frequency Transistor
NamChol Yu,
IlRyong Bong,
ChenNam Kim and
SongChol Yang
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NamChol Yu: Kim Chaek University of Technology, Pyongyang, Democratic People’s Republic of Korea
IlRyong Bong: Sariwon College of Technology, North HuangHae, Democratic People’s Republic of Korea
ChenNam Kim: University of Science, Pyongyang, Democratic People’s Republic of Korea
SongChol Yang: Pyongsong University of Education, South Pyongan, Democratic People’s Republic of Korea
International Journal of Research and Innovation in Applied Science, 2025, vol. 10, issue 9, 988-994
Abstract:
This paper reports new deposition model of boron impurity considered formation of oxide film during deposition process. Finally, we have considered the impurity concentration change in silicon surface and found that diffusion coefficient in the thin oxide film increases more 100 times than the thick oxide film. The result contributes to get the accurate simulation value. This new boron deposition model will apply to find the formation condition of base layer in fabrication process of high-frequency transistor.
Date: 2025
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Persistent link: https://EconPapers.repec.org/RePEc:bjf:journl:v:10:y:2025:i:9:p:988-994
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