Degradation Mechanisms and Lifetime Modeling of Power Semiconductor Devices

Mohammad Ariful Islam
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Mohammad Ariful Islam: Sylhet Gas Fields Ltd, Bangladesh.

International Journal of Research and Innovation in Applied Science, 2022, vol. 7, issue 10, 38-42

Abstract: Lifetime modeling and predicting for power semiconductor devices has become important due to higher demands on reliability and economy, i.e. to save time and money. Understanding the degradation mechanisms of such devices in a complex interplay of thermal, mechanical, and electrical loading in often harsh environment is a very challenging task, involving the competences of electronic engineers, simulation experts, materials scientists, physicists and mathematicians – with the final goal to permit accurate prediction of failure probabilities in the ppm-range as a function of time. In this review paper, I’ve discussed previously published literature on degradation mechanisms, experimental results obtained in several studies, lifetime prediction procedure, lifetime model and some preventive measures that can be taken against permanent damage.

Date: 2022
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