Frequency Analysis of Semiconductor Devices Using Full-Band Cellular Monte Carlo Simulations

Branlard J., Aboud S., Osuch P., Goodnick S. and Saraniti M.
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Branlard J.: Electrical and Computer Engineering Department, Illinois Institute of Technology, Chicago, IL 60616, USA
Aboud S.: Department of Molecular Biophysics, Rush University, Chicago, IL, USA
Osuch P.: Electrical and Computer Engineering Department, Illinois Institute of Technology, Chicago, IL 60616, USA
Goodnick S.: Electrical Engineering Department, Arizona State University, Tempe, AZ, USA
Saraniti M.: Electrical and Computer Engineering Department, Illinois Institute of Technology, Chicago, IL 60616, USA

Monte Carlo Methods and Applications, 2004, vol. 10, issue 3-4, 227-233

Abstract: The goal of this work is to use a particle-based simulation tool to perform a comparative study of two techniques used to calculate the small-signal response of semiconductor devices. Several GaAs and Si devices have been simulated in the frequency domain to derive their frequency dependent complex output impedance. Conclusions are drawn regarding the applicability and advantages of both approaches.

Keywords: particle-based simulation; full-band; Fourier Decomposition; small-signal analysis; GaAs MESFETs; SOI MOSFETs (search for similar items in EconPapers)
Date: 2004
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DOI: 10.1515/mcma.2004.10.3-4.227

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