Full band Monte Carlo simulation - beyond the semiclassical approach

Nilsson Hans-Erik, Martinez Antonio and Hjelm Mats
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Nilsson Hans-Erik: Department of Information Technology and Media, Mid-Sweden University, SE-851 70 Sundsvall, Sweden
Martinez Antonio: Solid State Electronics, Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden
Hjelm Mats: Department of Information Technology and Media, Mid-Sweden University, SE-851 70 Sundsvall, Sweden

Monte Carlo Methods and Applications, 2004, vol. 10, issue 3-4, 481-490

Abstract: A quantum mechanical extension of the full band ensemble Monte Carlo (MC) simulation method is presented. The new approach goes beyond the traditional semi-classical method generally used in MC simulations of charge transport in semiconductor materials and devices. The extension is necessary in high-field simulations of semiconductor materials with a complex unit cell, such as the hexagonal SiC polytypes or wurtzite GaN. Instead of complex unit cells the approach can also be used for super-cells, in order to understand charge transport at surfaces, around point defects, or in quantum wells.

Keywords: Monte Carlo methods; charge transport; semiconductor device simulation; quantum transport (search for similar items in EconPapers)
Date: 2004
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DOI: 10.1515/mcma.2004.10.3-4.481

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