Monte Carlo Simulation of Narrow-Width SOI Devices: Incorporation of the Short Range Coulomb Interaction

Vasileska Dragica and Ahmed Shaikh S.
Additional contact information
Vasileska Dragica: Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-5706. E-mail: vasileska@asu.edu
Ahmed Shaikh S.: Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-5706. E-mail: sahmed@asu.edu

Monte Carlo Methods and Applications, 2004, vol. 10, issue 3-4, 629-640

Abstract: The ultimate limits in scaling of conventional MOSFET devices have led the researchers from all over the world to look for novel device concepts, such as dual-date SOI devices, FinFETs, focused ion beam MOSFETs, etc. These novel devices suppress some of the short channel effects exhibited by conventional MOSFET devices. However, a lot of the old issues still remain and new issues begin to appear. For example, in both dual-gate MOSFETs and in Fin-FET devices, quantum mechanical size quantization effects significantly affect the overall device behavior. In addition, unintentional doping leads to considerable fluctuation in the device parameters, and the electron-electron interactions affect the thermalization of the carriers at the drain end of the device. In this work we investigate the role of a single impurity on the operation of narrow-width SOI devices. Our investigations suggest that impurities near the middle portion of the source end of the channel have most significant impact on the device drive current. Regarding the electron-electron interactions, we find that they affect the carrier velocity near the drain end of the channel. Note that in our 3D Monte Carlo particle-based device simulator, we have implemented two schemes that properly account for the short-range electron-ion and electron-electron interactions: the corrected Coulomb approach and the P3M method.

Keywords: Monte Carlo methods; SOI devices; discrete impurity effects; electron-electron interactions (search for similar items in EconPapers)
Date: 2004
References: Add references at CitEc
Citations:

Downloads: (external link)
https://doi.org/10.1515/mcma.2004.10.3-4.629 (text/html)
For access to full text, subscription to the journal or payment for the individual article is required.

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:bpj:mcmeap:v:10:y:2004:i:3-4:p:629-640:n:43

Ordering information: This journal article can be ordered from
https://www.degruyter.com/journal/key/mcma/html

DOI: 10.1515/mcma.2004.10.3-4.629

Access Statistics for this article

Monte Carlo Methods and Applications is currently edited by Karl K. Sabelfeld

More articles in Monte Carlo Methods and Applications from De Gruyter
Bibliographic data for series maintained by Peter Golla ().