Understanding the contribution of energy and angular distribution in the morphology of thin films using Monte Carlo simulation

Bouazza Abdelkader () and Settaouti Abderrahmane ()
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Bouazza Abdelkader: Electrical Engineering Department, University Ibn Khaldoun of Tiaret, Tiaret, Algeria
Settaouti Abderrahmane: Electrical Engineering Department, University of Sciences and Technology Oran, Bir El Djir, Algeria

Monte Carlo Methods and Applications, 2018, vol. 24, issue 3, 215-224

Abstract: The energy and the angular distribution of atoms are considered like two parameters most influent in the optimization of the sputtering and subsequently on the deposit, resulting in films having the desired properties (homogeneity in thickness, composition identical to that of the evaporated material). Moreover, a great influence on the shape and quality of thin films is obtained. In this work, a simulation with a Monte Carlo (MC) method is used to calculate the sputtering yield for different energies and angular distributions of atoms of metals (Cu, Al and Ag) and semiconductors (Ge, Si and Te) bombarded by different gas particles (Ar, Xe and Ne). Our results showed that when arriving at a certain energy value EmaxE_{\rm max}, sputtering yield will be in maximum Y⁢1maxY1_{\rm max}. Applying this EmaxE_{\rm max} and with variation in the angular distribution, we will obtain θmax\theta_{\rm max} corresponding to the maximum of sputtering yield Y⁢2maxY2_{\rm max}. These two values (EmaxE_{\rm max}, θmax\theta_{\rm max}) give the maximum of atoms sputtered and as a result, the films will be uniform. The obtained results are in very high agreement with other works, which validates our calculations.

Keywords: Thin films; sputtering; Monte Carlo (MC) simulation; sputtering yield (search for similar items in EconPapers)
Date: 2018
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DOI: 10.1515/mcma-2018-0019

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