Temperature changes of I-V characteristics of photovoltaic cells as a consequence of the Fermi energy level shift

Martin Libra, Vladislav Poulek and Pavel Kouřím
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Vladislav Poulek: Department of Physics, Faculty of Engineering, Czech University of Life Sciences Prague, Prague, Czech Republic
Pavel Kouřím: Department of Physics, Faculty of Engineering, Czech University of Life Sciences Prague, Prague, Czech Republic

Research in Agricultural Engineering, 2017, vol. 63, issue 1, 10-15

Abstract: Current voltage (I-V) characteristic of illuminated photovoltaic (PV) cell varies with temperature changes. The effect is explained according to the solid state theory. The higher the temperature, the lower the open-circuit voltage and the higher the short-circuit current. This behaviour is explained on the basis of band theory of the solid state physics. The increasing temperature causes a narrowing of the forbidden gap and a shift of the Fermi energy level toward the centre of the forbidden gap. Both these effects lead to a reduction of the potential barrier in the band diagram of the illuminated PN junction, and thus to a decrease of the photovoltaic voltage. In addition, narrowing of the forbidden gap causes higher generation of electron-hole pairs in the illuminated PN junction and short-circuit current increases.

Keywords: PV cell; energy band structure; PN junction; semiconductor diode; I-V characteristics (search for similar items in EconPapers)
Date: 2017
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Persistent link: https://EconPapers.repec.org/RePEc:caa:jnlrae:v:63:y:2017:i:1:id:38-2015-rae

DOI: 10.17221/38/2015-RAE

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