Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects

A. Matallana, E. Ibarra, I. López, J. Andreu, J.I. Garate, X. Jordà and J. Rebollo

Renewable and Sustainable Energy Reviews, 2019, vol. 113, issue C, -

Abstract: A large number of factors such as the increasingly stringent pollutant emission policies, fossil fuel scarcity and their price volatility have increased the interest towards the partial or total electrification of current vehicular technologies. These transition of the vehicle fleet into electric is being carried out progressively. In the last decades, several technological milestones have been achieved, which range from the development of basic components to the current integrated electric drives made of silicon (Si) based power modules. In this context, the automotive industry and political and social agents are forcing the current technology of electric drives to its limits. For example, the U.S Department of Energy’s goals for 2020 include the development of power converter technologies with power densities higher than 14.1 kW/kg and efficiencies greater than 98%. Additionally, target price of power converters has been set below $3.3/kW. Thus, these goals could be only achieved by using advanced semiconductor technologies. Wide-bandgap (WBG) semiconductors, and, most notably, silicon carbide (SiC) based power electronic devices, have been proposed as the most promising alternative to Si devices due to their superior material properties.

Keywords: EV; WBG; SiC; GaN; Power semiconductors; Power module; Parallelization; Parasitic inductances; Layout; Gate-attack; DBC; Connectors (search for similar items in EconPapers)
Date: 2019
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Citations: View citations in EconPapers (4)

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DOI: 10.1016/j.rser.2019.109264

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