Unification of contemporary negative bias temperature instability models for p-MOSFET energy degradation

Nissar Mohammad Karim, Sadia Manzoor and Norhayati Soin

Renewable and Sustainable Energy Reviews, 2013, vol. 26, issue C, 776-780

Abstract: In this article, we present contemporary research advancements on negative bias temperature instability (NBTI) degradation models which are responsible for p-MOSFET energy degradation. Hence, we propose a unified theory on the recent models in order to predict the transistor aging by considering the energy effect. Development of the newly modified model in this article is followed by a reassesment on NBTI models considering energy degradation. Unlike many of the previous models, the proposed theory of NBTI degradation projects the reliability in both stress and recovery phase; which follows power law.

Keywords: Energy degradation; Reliability; CMOS lifetime (search for similar items in EconPapers)
Date: 2013
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Persistent link: https://EconPapers.repec.org/RePEc:eee:rensus:v:26:y:2013:i:c:p:776-780

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DOI: 10.1016/j.rser.2013.06.004

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