Predominant Scattering Mechanisms in Quaternary AlInGaN/GaN Heterostructures

Remziye Tülek, Sibel Gökden, Ali Teke, Engin Arslan and Ekmel Özbay
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Remziye Tülek: Balıkesir University, Turkey
Sibel Gökden: Balıkesir University, Turkey
Ali Teke: Balıkesir University, Turkey
Engin Arslan: Antalya Bilim University, Turkey
Ekmel Özbay: Bilkent University, Turkey

European Journal of Applied Physics, 2022, vol. 4, issue 6, 34-41

Abstract: Scattering mechanisms that limit the mobility of two-dimensional electron gas (2DEG) in AlInGaN/GaN heterojunctions with three different barrier layer thicknesses of 37.2 (sample A), 10.6 (sample B) and 4.30 (sample C) nm were studied. Hall measurements were performed between 12 and 350 K. Mobilities limited by scattering due to acoustic and optic phonons, dislocation, interface roughness, and alloy disorder were used in the calculation. It was found that scattering, predominantly due to interface roughness, determine the Hall mobility for all samples at different strengths. The highest electron mobility of 492 cm2V-1s-1 at room temperature is obtained for sample B with a high sheet density of about 4.43 x 1013 cm-2 and a corresponding sheet resistance of 287 Ω.

Keywords: AlInGaN/GaN; Interface Roughness Scattering; Transport. (search for similar items in EconPapers)
Date: 2022
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Persistent link: https://EconPapers.repec.org/RePEc:epw:physic:v:4:y:2022:i:6:id:11228

DOI: 10.24018/ejphysics.2022.4.6.228

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