Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

Hui Li, Xinglin Liao, Yaogang Hu, Zhangjian Huang and Kun Wang
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Hui Li: State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, No.174, Shazhengjie Road, Shapingba, Chongqing 400044, China
Xinglin Liao: State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, No.174, Shazhengjie Road, Shapingba, Chongqing 400044, China
Yaogang Hu: State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, No.174, Shazhengjie Road, Shapingba, Chongqing 400044, China
Zhangjian Huang: State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, No.174, Shazhengjie Road, Shapingba, Chongqing 400044, China
Kun Wang: State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, No.174, Shazhengjie Road, Shapingba, Chongqing 400044, China

Energies, 2017, vol. 10, issue 10, 1-19

Abstract: Due to our limited knowledge about silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs), the theoretical analysis and change regularity in terms of the effects of temperature on their switching characteristics have not been fully characterized and understood. An analysis of variation in voltage (d V DS /d t ) for SiC MOSFET during turn-on and turn-off has been performed theoretically and experimentally in this paper. Turn-off variation in voltage is not a strong function of temperature, whereas the turn-on variation in voltage has a monotonic relationship with temperature. The temperature dependence is a result of the competing effects between the positive temperature coefficient of the intrinsic carrier concentration and the negative temperature coefficient of the effective mobility of the electrons in SiC MOSFETs. The relationship between variation in voltage and supply voltage, load current, and gate resistance are also discussed. A temperature-based analytical model of d V DS /d t for SiC MOSFETs was derived in terms of internal parasitic capacitances during the charging and discharging processes at the voltage fall period during turn-on, and the rise period during turn-off. The calculation results were close to the experimental measurements. These results provide a potential junction temperature estimation approach for SiC MOSFETs. In SiC MOSFET-based practical applications, if the turn on d V DS /d t is sensed, the device temperature can be estimated from the relationship curve of turn on d V DS /d t versus temperature drawn in advance.

Keywords: power semiconductor device; temperature; switching transients; variation in voltage (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2017
References: View complete reference list from CitEc
Citations: View citations in EconPapers (2)

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