Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device

Hao Liu, Xianjin Huang, Fei Lin and Zhongping Yang
Additional contact information
Hao Liu: School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China
Xianjin Huang: School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China
Fei Lin: School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China
Zhongping Yang: School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China

Energies, 2017, vol. 10, issue 12, 1-20

Abstract: Currently, the auxiliary converter in the auxiliary power supply system of a modern tram adopts Si IGBT as its switching device and with the 1700 V/225 A SiC MOSFET module commercially available from Cree, an auxiliary converter using all SiC devices is now possible. A SiC auxiliary converter prototype is developed during this study. The author(s) derive the loss calculation formula of the SiC auxiliary converter according to the system topology and principle and each part loss in this system can be calculated based on the device datasheet. Then, the static and dynamic characteristics of the SiC MOSFET module used in the system are tested, which aids in fully understanding the performance of the SiC devices and provides data support for the establishment of the PLECS loss simulation model. Additionally, according to the actual circuit parameters, the PLECS loss simulation model is set up. This simulation model can simulate the actual operating conditions of the auxiliary converter system and calculate the loss of each switching device. Finally, the loss of the SiC auxiliary converter prototype is measured and through comparison it is found that the loss calculation theory and PLECS loss simulation model is valuable. Furthermore, the thermal images of the system can prove the conclusion about loss distribution to some extent. Moreover, these two methods have the advantages of less variables and fast calculation for high power applications. The loss models may aid in optimizing the switching frequency and improving the efficiency of the system.

Keywords: SiC MOSFET; tram; auxiliary converter; loss model; DC/DC converters; DC/AC inverters (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2017
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (3)

Downloads: (external link)
https://www.mdpi.com/1996-1073/10/12/2018/pdf (application/pdf)
https://www.mdpi.com/1996-1073/10/12/2018/ (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:gam:jeners:v:10:y:2017:i:12:p:2018-:d:121149

Access Statistics for this article

Energies is currently edited by Ms. Agatha Cao

More articles in Energies from MDPI
Bibliographic data for series maintained by MDPI Indexing Manager ().