Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Matteo Meneghini, Oliver Hilt, Joachim Wuerfl and Gaudenzio Meneghesso
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Matteo Meneghini: Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy
Oliver Hilt: Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Joachim Wuerfl: Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Gaudenzio Meneghesso: Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy

Energies, 2017, vol. 10, issue 2, 1-15

Abstract: GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and reliability of these devices by presenting original data. The first part of the paper describes the technological issues related to the development of a p-GaN gate, and the most promising solutions for minimizing the gate leakage current. In the second part of the paper, we describe the most relevant mechanisms that limit the dynamic performance and the reliability of GaN-based normally-off transistors. More specifically, we discuss the following aspects: (i) the trapping effects specific for the p-GaN gate; (ii) the time-dependent breakdown of the p-GaN gate during positive gate stress and the related physics of failure; (iii) the stability of the electrical parameters during operation at high drain voltages. The results presented within this paper provide information on the current status of the performance and reliability of GaN-based E-mode transistors, and on the related technological issues.

Keywords: gallium nitride; transistor; p-GaN; normally-off; reliability; degradation (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2017
References: View complete reference list from CitEc
Citations: View citations in EconPapers (3)

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