A New Vertical JFET Power Device for Harsh Radiation Environments

Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, Xavier Jordà, Xavier Perpiñà, David Quirion, Lucia Ré, Miguel Ullán and Miquel Vellvehí
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Pablo Fernández-Martínez: Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain
David Flores: Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain
Salvador Hidalgo: Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain
Xavier Jordà: Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain
Xavier Perpiñà: Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain
David Quirion: Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain
Lucia Ré: Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain
Miguel Ullán: Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain
Miquel Vellvehí: Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain

Energies, 2017, vol. 10, issue 2, 1-16

Abstract: An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution.

Keywords: rad-hard power devices; JFET; vertical power devices; power distribution; electronics for High Energy Physics (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2017
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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