High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Sayan Seal and Homer Alan Mantooth
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Sayan Seal: Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA
Homer Alan Mantooth: Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA

Energies, 2017, vol. 10, issue 3, 1-30

Abstract: This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed.

Keywords: wide bandgap; power electronics; high power density; 3D packaging; wire bondless (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2017
References: View complete reference list from CitEc
Citations: View citations in EconPapers (5)

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