A High-Power-Density Single-Phase Rectifier Based on Three-Level Neutral-Point Clamped Circuits

Tao Zhou, Zeliang Shu, Hongjian Lin, Deng Luo, Yajun Chen and Xiaoxiao Guo
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Tao Zhou: School of Electrical Engineering, Southwest Jiaotong University, Chengdu 610031, China
Zeliang Shu: School of Electrical Engineering, Southwest Jiaotong University, Chengdu 610031, China
Hongjian Lin: School of Electrical Engineering, Southwest Jiaotong University, Chengdu 610031, China
Deng Luo: School of Electrical Engineering, Southwest Jiaotong University, Chengdu 610031, China
Yajun Chen: State Grid Suining Power Supply Company, Suining 629000, China
Xiaoxiao Guo: Monolithic Power Systems, Shenzhen 518000, China

Energies, 2017, vol. 10, issue 5, 1-11

Abstract: A single-phase three-level converter is suitable for medium-power applications, with an interface voltage that is higher than that of a traditional two-level configuration. The three-level neutral-point clamped converter is adopted using four switches in each bridge arm, which, compared to a two-level rectifier, leads to less voltage stress, a lower switching frequency, and switching loss on switches. The transient current control strategy is designed to control the active power. The single-phase space vector pulse width modulation (SVPWM) with a voltage balance strategy is designed to solve the neutral point voltage fluctuation problem and keep the dc-link voltage stable. A 1.3 kW high-power-density prototype based on SiC MOSFET was built and tested. The experimental results verified the high performance of steady-state and dynamic responses.

Keywords: single-phase rectifier; three-level neutral-point clamped converter; SiC MOSFET; space vector pulse width modulation (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2017
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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