Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates

Elena Alexandra Serban, Justinas Palisaitis, Muhammad Junaid, Lina Tengdelius, Hans Högberg, Lars Hultman, Per Ola Åke Persson, Jens Birch and Ching-Lien Hsiao
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Elena Alexandra Serban: Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-58183, Sweden
Justinas Palisaitis: Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-58183, Sweden
Muhammad Junaid: Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-58183, Sweden
Lina Tengdelius: Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-58183, Sweden
Hans Högberg: Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-58183, Sweden
Lars Hultman: Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-58183, Sweden
Per Ola Åke Persson: Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-58183, Sweden
Jens Birch: Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-58183, Sweden
Ching-Lien Hsiao: Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-58183, Sweden

Energies, 2017, vol. 10, issue 9, 1-13

Abstract: We demonstrate the versatility of magnetron sputter epitaxy by achieving high-quality GaN nanorods on different substrate/template combinations, specifically Si, SiC, TiN/Si, ZrB 2 /Si, ZrB 2 /SiC, Mo, and Ti. Growth temperature was optimized on Si, TiN/Si, and ZrB 2 /Si, resulting in increased nanorod aspect ratio with temperature. All nanorods exhibit high purity and quality, proved by the strong bandedge emission recorded with cathodoluminescence spectroscopy at room temperature as well as transmission electron microscopy. These substrates/templates are affordable compared to many conventional substrates, and the direct deposition onto them eliminates cumbersome post-processing steps in device fabrication. Thus, magnetron sputter epitaxy offers an attractive alternative for simple and affordable fabrication in optoelectronic device technology.

Keywords: GaN; nanorods; Si, SiC, Ti, Mo, TiN and ZrB 2 templates; magnetron sputtering; epitaxy (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2017
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