A High-Precision Adaptive Thermal Network Model for Monitoring of Temperature Variations in Insulated Gate Bipolar Transistor (IGBT) Modules

Ning An, Mingxing Du, Zhen Hu and Kexin Wei
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Ning An: Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
Mingxing Du: Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
Zhen Hu: School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072, China
Kexin Wei: Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China

Energies, 2018, vol. 11, issue 3, 1-16

Abstract: This paper proposes a novel method for optimizing the Cauer-type thermal network model considering both the temperature influence on the extraction of parameters and the errors caused by the physical structure. In terms of prediction of the transient junction temperature and the steady-state junction temperature, the conventional Cauer-type parameters are modified, and the general method for estimating junction temperature is studied by using the adaptive thermal network model. The results show that junction temperature estimated by our adaptive Cauer-type thermal network model is more accurate than that of the conventional model.

Keywords: insulated gate bipolar transistor (IGBT); thermal network; parameter identification; junction temperature (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2018
References: View complete reference list from CitEc
Citations: View citations in EconPapers (2)

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