ZnS/SiO 2 Passivation Layer for High-Performance of TiO 2 /CuInS 2 Quantum Dot Sensitized Solar Cells

Hee-Je Kim, Jin-Ho Bae, Hyunwoong Seo, Masaharu Shiratani and Chandu Venkata Veera Muralee Gopi
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Hee-Je Kim: School of Electrical and Computer Engineering, Pusan National University, Geumjeong-gu, Busan 46241, Korea
Jin-Ho Bae: School of Electrical and Computer Engineering, Pusan National University, Geumjeong-gu, Busan 46241, Korea
Hyunwoong Seo: Department of Energy Engineering, Inje University, 197 Inje-ro, Gimhae-si, Gyeongsangnamdo 50834, Korea
Masaharu Shiratani: Department of Electronics, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
Chandu Venkata Veera Muralee Gopi: School of Electrical and Computer Engineering, Pusan National University, Geumjeong-gu, Busan 46241, Korea

Energies, 2018, vol. 11, issue 8, 1-9

Abstract: Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO 2 blocking layer was deposited on TiO 2 /CuInS 2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO 2 /CuInS 2 /ZnS/SiO 2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO 2 /CuInS 2 (2.15%) and TiO 2 /CuInS 2 /ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO 2 passivation layer on TiO 2 /CuInS 2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

Keywords: QDSSCs; Charge recombination; ZnS/SiO 2; Passivation layer (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2018
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