Extraction of Junction Temperature of SiC MOSFET Module Based on Turn-On dI DS /dt

Delei Huang, Guojun Tan, Chengfei Geng, Jingwei Zhang and Chang Liu
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Delei Huang: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China
Guojun Tan: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China
Chengfei Geng: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China
Jingwei Zhang: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China
Chang Liu: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China

Energies, 2018, vol. 11, issue 8, 1-15

Abstract: In this paper, a method of extracting the junction temperature based on the turn-on current switching rate ( dI DS /dt ) of silicon carbide (SiC) metal-oxide semiconductor field effect transistors (MOSFETs) is proposed. The temperature dependence of dI DS /dt is analyzed theoretically, and experimentally to show that dI DS /dt increases with the rising junction temperature. In addition, other factors affecting dI DS /dt are also discussed by using the fundamental device physics equations and experiments. The result shows that the increase of the DC-link voltage V DC , the external gate resistance R G-ext , and the decrease of the driving voltage V GG can increase the temperature sensitivity of the dI DS /dt . A PCB (printed circuit board) Rogowski coil measuring circuit based on the fact that the SiC MOSFET chip temperature and dI DS /dt is estimated in a linear way is designed to obtain the junction temperature. The experimental results demonstrate that the proposed junction temperature extracting is effective.

Keywords: junction temperature extraction; silicon carbide; switching transients; thermo-sensitive electrical parameter (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2018
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