Numerical Simulation of Crystalline Silicon Heterojunction Solar Cells with Different p-Type a-SiO x Window Layer

Chia-Hsun Hsu, Xiao-Ying Zhang, Hai-Jun Lin, Shui-Yang Lien, Yun-Shao Cho and Chang-Sin Ye
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Chia-Hsun Hsu: School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Xiao-Ying Zhang: School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Hai-Jun Lin: School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Shui-Yang Lien: School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Yun-Shao Cho: Department of Materials Science and Engineering, Da-Yeh University, Chunghwa 51595, Taiwan
Chang-Sin Ye: Metal Industries Research & Development Centre Opto-Electronics System Section, Kaohsiung 81160, Taiwan

Energies, 2019, vol. 12, issue 13, 1-8

Abstract: In this study, p-type amorphous silicon oxide (a-SiO x ) films are deposited using a radio-frequency inductively-coupled plasma chemical vapor deposition system. Effects of the CO 2 gas flow rate on film properties and crystalline silicon heterojunction (HJ) solar cell performance are investigated. The experimental results show that the band gap of the a-SiO x film can reach 2.1 eV at CO 2 flow rate of 10 standard cubic centimeters per minute (sccm), but the conductivity of the film deteriorates. In the device simulation, the transparent conducting oxide and contact resistance are not taken into account. The electrodes are assumed to be perfectly conductive and transparent. The simulation result shows that there is a tradeoff between the increase in the band gap and the reduction in conductivity at increasing CO 2 flow rate, and the balance occurs at the flow rate of six sccm, corresponding to a band gap of 1.95 eV, an oxygen content of 34%, and a conductivity of 3.3 S/cm. The best simulated conversion efficiency is 25.58%, with an open-circuit voltage of 741 mV, a short-circuit current density of 42.3 mA/cm 2 , and a fill factor of 0.816%.

Keywords: heterojunction; crystalline silicon; solar cell; silicon oxide (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2019
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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