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Voltage Balance Switching Scheme for Series-Connected SiC MOSFET LLC Resonant Converter

Hwa-Rang Cha and Rae-Young Kim
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Hwa-Rang Cha: The Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, Korea
Rae-Young Kim: The Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, Korea

Energies, 2019, vol. 12, issue 20, 1-17

Abstract: To achieve high efficiency and power density, silicon carbide (SiC)-based Inductor-Inductor-Capacitor (LLC) resonant converters are applied to the DC/DC converter stage of a solid-state transformer (SST). However, because the input voltage of an SST is higher than the rated voltage of a commercial SiC device, it is essential to connect SiC devices in series. This structure is advantageous in terms of voltage rating, but a parasitic capacitance tolerance between series-connected SiC devices causes voltage imbalance. Such imbalance greatly reduces system stability as it causes overvoltage breakdown of SiC device. Therefore, this paper proposes a switching scheme to solve the voltage imbalance between SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). The proposed scheme sequentially turns off series-connected SiC MOSFETs to compensate for the turn-off delays caused by parasitic capacitor tolerances. In addition, dead-time selection methods to achieve voltage balance and zero voltage switching simultaneously are provided in detail. To verify the effectiveness of the proposed scheme, experiments were conducted on a 2 kW series-connected SiC MOSFET LLC resonant converter prototype.

Keywords: series-connected SiC MOSFETs; voltage balancing; solid-state transformer; LLC resonant converter (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2019
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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