10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Besar Asllani, Hervé Morel, Luong Viêt Phung and Dominique Planson
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Besar Asllani: SuperGrid Institute, 23 rue Cyprian CS 50289, 69628 Villeurbanne CEDEX, France
Hervé Morel: Univ Lyon, ECL, INSA Lyon, Univ. Claude Bernard, F-69621 CNRS, France
Luong Viêt Phung: Univ Lyon, ECL, INSA Lyon, Univ. Claude Bernard, F-69621 CNRS, France
Dominique Planson: Univ Lyon, ECL, INSA Lyon, Univ. Claude Bernard, F-69621 CNRS, France

Energies, 2019, vol. 12, issue 23, 1-12

Abstract: This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm 2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.

Keywords: SiC 10 kV PiN diode; device processing; electrical characterization; high-voltage device packaging; double-pulse test; smartgrid; MVDC; HVDC (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2019
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