The Impact of Thermal Treatment on Light-Induced Degradation of Multicrystalline Silicon PERC Solar Cell

Shude Zhang, Jiaqi Peng, Hongqiang Qian, Honglie Shen, Qingzhu Wei, Weifei Lian, Zhichun Ni, Jiansheng Jie, Xiaohong Zhang and Lingzhi Xie
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Shude Zhang: Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, China
Jiaqi Peng: Suzhou Talesun Solar Technologies Co., Ltd., Changshu 215542, Jiangsu, China
Hongqiang Qian: Suzhou Talesun Solar Technologies Co., Ltd., Changshu 215542, Jiangsu, China
Honglie Shen: Nanjing University of Aeronautics & Astronautics, Nanjing 210016, Jiangsu, China
Qingzhu Wei: Suzhou Talesun Solar Technologies Co., Ltd., Changshu 215542, Jiangsu, China
Weifei Lian: Suzhou Talesun Solar Technologies Co., Ltd., Changshu 215542, Jiangsu, China
Zhichun Ni: Suzhou Talesun Solar Technologies Co., Ltd., Changshu 215542, Jiangsu, China
Jiansheng Jie: Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, China
Xiaohong Zhang: Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, China
Lingzhi Xie: Institute of New Energy and Low-carbon Technology, Sichuan University, Chengdu 610065, Sichuan, China

Energies, 2019, vol. 12, issue 3, 1-9

Abstract: Multicrystalline silicon (mc-Si) PERC (passivated emitter and rear cell) solar cells suffer from severe light-induced degradation (LID), which mainly consists of two mechanisms, namely, BO-LID (boron–oxygen complex-related LID) and LeTID (light and elevated temperature induced degradation). The impact of thermal treatment on the LID of a mc-Si PERC solar cell is investigated in this work. The LID of mc-Si PERC solar cells could be alleviated by lowering the peak temperature of thermal treatment (namely sintering), perhaps because fewer impurities present in mc-Si tended to dissolve into interstitial atoms, which have the tendency to form LeTID-related recombination active complexes. The LID could also be effectively restrained by partially replacing the boron dopant with gallium, which is ascribed to the decreased amount of boron–oxygen (B–O) complexes. This work provides a facile way to solve the severe LID problem in mc-Si PERC solar cells in mass production.

Keywords: multicrystalline silicon PERC solar cell; light-induced degradation; thermal treatment; dopant (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2019
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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