A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Qingyi Kong, Mingxing Du, Ziwei Ouyang, Kexin Wei and William Gerard Hurley
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Qingyi Kong: Tianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
Mingxing Du: Tianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
Ziwei Ouyang: Tianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
Kexin Wei: Tianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
William Gerard Hurley: Tianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China

Energies, 2019, vol. 12, issue 5, 1-15

Abstract: The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

Keywords: IGBT module; on-state voltage; separation method; model (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2019
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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