Application of Silicon Oxide on High Efficiency Monocrystalline Silicon PERC Solar Cells

Shude Zhang, Yue Yao, Dangping Hu, Weifei Lian, Hongqiang Qian, Jiansheng Jie, Qingzhu Wei, Zhichun Ni, Xiaohong Zhang and Lingzhi Xie
Additional contact information
Shude Zhang: Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
Yue Yao: Suzhou Talesun Solar Technologies Co., Ltd., Changshu 215542, China
Dangping Hu: Suzhou Talesun Solar Technologies Co., Ltd., Changshu 215542, China
Weifei Lian: Suzhou Talesun Solar Technologies Co., Ltd., Changshu 215542, China
Hongqiang Qian: Suzhou Talesun Solar Technologies Co., Ltd., Changshu 215542, China
Jiansheng Jie: Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
Qingzhu Wei: Suzhou Talesun Solar Technologies Co., Ltd., Changshu 215542, China
Zhichun Ni: Suzhou Talesun Solar Technologies Co., Ltd., Changshu 215542, China
Xiaohong Zhang: Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
Lingzhi Xie: Institute of New Energy and Low-carbon Technology, Sichuan University, Chengdu 610065, China

Energies, 2019, vol. 12, issue 6, 1-11

Abstract: In the photovoltaic industry, an antireflection coating consisting of three SiN x layers with different refractive indexes is generally adopted to reduce the reflectance and raise the efficiency of monocrystalline silicon PERC (passivated emitter and rear cell) solar cells. However, for SiN x , a refractive index as low as about 1.40 cannot be achieved, which is the optimal value for the third layer of a triple-layer antireflection coating. Therefore, in this report the third layer is replaced by SiO x , which possesses a more appropriate refractive index of 1.46, it and can be easily integrated into the SiN x deposition process with the plasma-enhanced chemical vapor deposition (PECVD) method. Through simulation and analysis with SunSolve, three different thicknesses were selected to construct the SiO x third layer. The replacement of 15 nm SiN x with 30 nm SiO x as the third layer of antireflection coating can bring about an efficiency gain of 0.15%, which originates from the reflectance reduction and spectral response enhancement below about 550 nm wavelength. However, because the EVA encapsulation material of the solar module absorbs light in short wavelengths, the spectral response advantage of solar cells with 30 nm SiO x is partially covered up, resulting in a slightly lower cell-to-module (CTM) ratio and an output power gain of only 0.9 W for solar module.

Keywords: silicon oxide; silicon nitride; triple-layer antireflection coating; monocrystalline silicon PERC solar cell (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2019
References: View complete reference list from CitEc
Citations: View citations in EconPapers (3)

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