A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy

Qingyi Kong, Mingxing Du, Ziwei Ouyang, Kexin Wei and William Gerard Hurley
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Qingyi Kong: Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
Mingxing Du: Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
Ziwei Ouyang: Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
Kexin Wei: Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
William Gerard Hurley: Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China

Energies, 2019, vol. 12, issue 9, 1-13

Abstract: On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current ( I c ) and junction temperature ( T j ). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

Keywords: insulated gate bipolar transistor (IGBT) module; bond wire failure; on-state voltage; separation strategy (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2019
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (2)

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