Thermal Analysis of Power Semiconductor Device in Steady-State Conditions

Adrian Plesca
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Adrian Plesca: Faculty of Electrical Engineering, Gheorghe Asachi Technical University of Iasi, Blvd. Dimitrie Mangeron, 21–23, 700050 Iasi, Romania

Energies, 2019, vol. 13, issue 1, 1-18

Abstract: Electronic devices can be damaged in an undesirable manner if the junction temperature achieves high values in order to cause thermal runaway and melting. This paper describes the mathematical model to calculate the power losses in power semiconductor devices used in bidirectional rectifier which supplies a resistive-inductive load. The obtained thermal model can be used to analyse the thermal behaviour of power semiconductors in steady-state conditions, at different values of the firing angle, direct current, air speed in the case of forced cooling, and different types of load. Also, the junction and case temperature of a power thyristor have been computed. In order to validate the proposed mathematical model, some experimental tests have been performed. The theoretical values are in good concordance with the experimental data and simulated results.

Keywords: power semiconductor; temperature distribution; mathematical model; thermal modelling and simulation (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2019
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (2)

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