Asymmetrical Three-Level Inverter SiC-Based Topology for High Performance Shunt Active Power Filter

Rodrigo Guzman Iturra and Peter Thiemann
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Rodrigo Guzman Iturra: Laboratory for Electrical Machines, Drives and Power Electronics, South Westphalia University of Applied Sciences (FH-SWF), 59494 Soest, Germany
Peter Thiemann: Laboratory for Electrical Machines, Drives and Power Electronics, South Westphalia University of Applied Sciences (FH-SWF), 59494 Soest, Germany

Energies, 2019, vol. 13, issue 1, 1-25

Abstract: Power quality conditioner systems, such as shunt active power filters (SAPFs), are typically required to have low power losses, high-power density, and to produce no electromagnetic interference to other devices connected to the grid. At the present, power converters with such a features are built using multilevel topologies based on pure silicon semiconductors. However, recently new semiconductors that offer massive reduction of power losses such as silicon carbide (SiC) MOSFETs have been introduced into the power electronics field. In the near future, the applications that demand the highest performance will be powered by multilevel converters based on SiC. In this paper a highly efficient three-level (3L) topology based entirely on silicon carbide (SiC) semiconductors for a SAPF is presented and analyzed in great detail. Furthermore, the proposed topology is compared with other full SiC-based conventional topologies: two level (2L), three-level T-type (3L-TNPC), and three-level neutral-point-clamped (3L-NPC) in terms of efficiency. The proposed asymmetrical topology has an efficiency superior to conventional all SiC 2L and 3L power circuits when the pulse or switching frequency of the system is set higher than 60 kHz. Further, for high current ratings, the asymmetrical topology has the advantage that it can be built just by cascading two half-bridge SiC modules.

Keywords: active filter; active damping; converter circuit; efficiency; harmonics; multilevel converters; power quality; Silicon Carbide (SiC); voltage source converter; wide bandgap devices (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2019
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (2)

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