Influence of the Carrier Selective Front Contact Layer and Defect State of a-Si:H/c-Si Interface on the Rear Emitter Silicon Heterojunction Solar Cells

Sunhwa Lee, Duy Phong Pham, Youngkuk Kim, Eun-Chel Cho, Jinjoo Park and Junsin Yi
Additional contact information
Sunhwa Lee: School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea
Duy Phong Pham: School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea
Youngkuk Kim: School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea
Eun-Chel Cho: School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea
Jinjoo Park: Division of Energy and Optical Technology Convergence, Cheongju University, Cheongju 28503, Korea
Junsin Yi: School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea

Energies, 2020, vol. 13, issue 11, 1-11

Abstract: In this research, simulations were performed to investigate the effects of carrier selective front contact (CSFC) layer and defect state of hydrogenated amorphous silicon passivation layer/n-type crystalline silicon interface in silicon heterojunction (SHJ) solar cells employing the Automat for Simulation of hetero-structure (AFORS-HET) simulation program. The results demonstrated the effects of band offset determined by band bending at the interface of the CSFC layer/passivation layer. In addition, the nc-SiOx: H CSFC layer not only reduces parasitic absorption loss but also has a tunneling effect and field effect passivation. Furthermore, it increased the selectivity of contact. In the experimental cell, nc-SiO x :H was used as the CSFC layer, where efficiency of the SHJ solar cell was 22.77%. Our investigation shows that if a SiO x layer passivation layer is used, the device can achieve efficiency up to 25.26%. This improvement in the cell is mainly due to the enhancement in open circuit voltage ( V oc ) because of lower interface defect density resulting from the SiO x passivation layer.

Keywords: carrier selective contact; rear emitter heterojunction; passivation (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2020
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

Downloads: (external link)
https://www.mdpi.com/1996-1073/13/11/2948/pdf (application/pdf)
https://www.mdpi.com/1996-1073/13/11/2948/ (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:gam:jeners:v:13:y:2020:i:11:p:2948-:d:368925

Access Statistics for this article

Energies is currently edited by Ms. Agatha Cao

More articles in Energies from MDPI
Bibliographic data for series maintained by MDPI Indexing Manager ().