Degradation Mechanism Due to Water Ingress Effect on the Top Contact of Cu(In,Ga)Se 2 Solar Cells

Deewakar Poudel, Shankar Karki, Benjamin Belfore, Grace Rajan, Sushma Swaraj Atluri, Sina Soltanmohammad, Angus Rockett and Sylvain Marsillac
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Deewakar Poudel: Virginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USA
Shankar Karki: Virginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USA
Benjamin Belfore: Virginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USA
Grace Rajan: Virginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USA
Sushma Swaraj Atluri: Virginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USA
Sina Soltanmohammad: Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401, USA
Angus Rockett: Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401, USA
Sylvain Marsillac: Virginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA 23529, USA

Energies, 2020, vol. 13, issue 17, 1-12

Abstract: The impact of moisture ingress on the surface of copper indium gallium diselenide (CIGS) solar cells was studied. While industry-scale modules are encapsulated in specialized polymers and glass, over time, the glass can break and the encapsulant can degrade. During such conditions, water can potentially degrade the interior layers and decrease performance. The first layer the water will come in contact with is the transparent conductive oxide (TCO) layer. To simulate the impact of this moisture ingress, complete devices were immersed in deionized water. To identify the potential sources of degradation, a common window layer for CIGS devices—a bilayer of intrinsic zinc oxide (i-ZnO) and conductive indium tin oxide (ITO)—was deposited. The thin films were then analyzed both pre and post water soaking. To determine the extent of ingress, dynamic secondary ion mass spectroscopy (SIMS) was performed on completed devices to analyze impurity diffusion (predominantly sodium and potassium) in the devices. The results were compared to device measurements, and indicated a degradation of device efficiency (mostly fill factor, contrary to previous studies), potentially due to a modification of the alkali profile.

Keywords: CIGS; corrosion; ITO; alkali (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2020
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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