A Novel Method to Achieve Selective Emitter Using Surface Morphology for PERC Silicon Solar Cells

Minkyu Ju, Jeongeun Park, Young Hyun Cho, Youngkuk Kim, Donggun Lim, Eun-Chel Cho and Junsin Yi
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Minkyu Ju: School of Electronic, Electrical Engineering, Korea National University of Transportation, Chungju 27469, Korea
Jeongeun Park: School of Electronic, Electrical Engineering, Korea National University of Transportation, Chungju 27469, Korea
Young Hyun Cho: School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea
Youngkuk Kim: School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea
Donggun Lim: School of Electronic, Electrical Engineering, Korea National University of Transportation, Chungju 27469, Korea
Eun-Chel Cho: School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea
Junsin Yi: School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea

Energies, 2020, vol. 13, issue 19, 1-14

Abstract: Recently, selective emitter (SE) technology has attracted renewed attention in the Si solar cell industry to achieve an improved conversion efficiency of passivated-emitter rear-contact (PERC) cells. In this study, we presented a novel technique for the SE formation by controlling the surface morphology of Si wafers. SEs were formed simultaneously, that is, in a single step for the doping process on different surface morphologies, nano/micro-surfaces, which were formed during the texturing processes; in the same doping process, the nano- and micro-structured areas showed different sheet resistances. In addition, the difference in sheet resistance between the heavily doped and shallow emitters could be controlled from almost 0 to 60 Ω/sq by changing the doping process conditions, pre-deposition and driving time, and temperature. Regarding cell fabrication, wafers simultaneously doped in the same tube were used. The sheet resistance of the homogeneously doped-on standard micro-pyramid surface was approximately 82 Ω/sq, and those of the selectively formed nano/micro-surfaces doped on were on 62 and 82 Ω/sq, respectively. As a result, regarding doped-on selectively formed nano/micro-surfaces, SE cells showed a J SC increase (0.44 mA/cm 2 ) and a fill factor (FF) increase (0.6%) with respect to the homogeneously doped cells on the micro-pyramid surface, resulting in about 0.27% enhanced conversion efficiency.

Keywords: selective emitter; surface morphology; doping process; PERC; solar cell (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2020
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