Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Kamil Bargieł, Damian Bisewski and Janusz Zarębski
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Kamil Bargieł: Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland
Damian Bisewski: Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland
Janusz Zarębski: Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland

Energies, 2020, vol. 13, issue 1, 1-9

Abstract: The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

Keywords: C–V characteristics; JFET; modelling; silicon carbide (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2020
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Citations: View citations in EconPapers (1)

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