Carrier Transmission Mechanism-Based Analysis of Front Surface Field Effects on Simplified Industrially Feasible Interdigitated Back Contact Solar Cells

Xiaoxuan Li and Aimin Liu
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Xiaoxuan Li: School of Microelectronics, Dalian University of Technology, Dalian 116024, China
Aimin Liu: School of Physics, Dalian University of Technology, Dalian 116024, China

Energies, 2020, vol. 13, issue 20, 1-13

Abstract: Interdigitated back contact (IBC) n-type silicon solar cells with a different front surface layer doping concentration were fabricated and studied and the influence of the front surface doping level was analyzed via simulation (PC1D). The IBC cells were processed by industrially feasible technologies including laser ablation and screen printing; photolithography was not used. A maximum efficiency of up to 20.88% was achieved at an optimal front surface field (FSF) peak doping concentration of 4.8 × 10 19 cm −3 with a sheet resistance of approximately 95 Ω/square, corresponding to J sc = 40.05 mA/cm 2 , V oc = 671 mV and a fill factor of 77.70%. The effects of the front surface doping level were studied in detail by analyzing parameters related to carrier transmission mechanisms such as minority carrier concentration, minority carrier lifetime and the saturation current density of the FSF (J 0e ). The influence of the front surface recombination velocity (FSRV) on the performance of IBC solar cells with different FSF layer doping concentrations was also investigated and was verified by examining the variation in the minority carrier density as a function of the distance from the front surface. In particular, the impact of the FSF doping concentration on the J sc of the IBC cells was clarified by considering carrier transmission mechanisms and the charge-collection probability. The trends revealed in the simulations agreed with the corresponding experimental data obtained from the fabricated IBC solar cells. This study not only verifies that the presented simulation is a reasonable and reliable guide for choosing the optimal front surface doping concentration in industrial IBC solar cells but also provides a deeper physical understanding of the impact that front surface layer doping has on the IBC solar cell performance considering carrier transmission mechanisms and the charge-collection probability.

Keywords: interdigitated back contact (IBC) silicon solar cells; n-type; industrially feasible process; photolithography free; PC1D; dopant concentration; carrier transmission mechanism; charge-collection probability (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2020
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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