Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application
Kwang-Hyung Cha,
Chang-Tae Ju and
Rae-Young Kim
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Kwang-Hyung Cha: The Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, Korea
Chang-Tae Ju: The Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, Korea
Rae-Young Kim: The Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, Korea
Energies, 2020, vol. 13, issue 20, 1-15
Abstract:
A device suitability analysis is performed herein by comparing the performance of a silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (MOSFET) and a gallium nitride (GaN) high-electron mobility transistor (HEMT), which are wide-bandgap (WBG) power semiconductor devices in induction heating (IH) systems. The WBG device presents advantages such as high-speed switching owing to its excellent physical properties, and when it is applied to the IH system, a high output power can be achieved through high-frequency driving. To exploit these advantages effectively, a suitability analysis comparing SiC and GaN with IH systems is required. In this study, SiC MOSFET and GaN HEMT are applied to the general half-bridge series resonant converter topology, and comparisons of the conduction loss, switching loss, reverse conduction loss, and thermal performance considering the characteristics of the device and the system conditions are performed. Accordingly, the device suitability in an IH system is analyzed. To verify the device conformance analysis, a resonant converter prototype with SiC and GaN rated at 650 V is constructed. The analysis is verified by an experimental comparison of power loss and thermal performance.
Keywords: WBG device; induction heating; GaN HEMT; SiC MOSFET; performance comparison; evaluation (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2020
References: View complete reference list from CitEc
Citations: View citations in EconPapers (8)
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