The Effect of ALD-Zn(O,S) Buffer Layer on the Performance of CIGSSe Thin Film Solar Cells

Woo-Jin Choi, Wan Woo Park, Yangdo Kim, Chang Sik Son and Donghyun Hwang
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Woo-Jin Choi: Energy Convergence Technology Center, Silla University, Busan 46958, Korea
Wan Woo Park: Research Center, Advanced Vacuum and Clean Equipment Optimizer Co., Ltd., Daegu 42724, Korea
Yangdo Kim: School of Materials Science and Engineering, Pusan National University, Busan 46241, Korea
Chang Sik Son: Division of Materials Science and Engineering, Silla University, Busan 46958, Korea
Donghyun Hwang: Division of Materials Science and Engineering, Silla University, Busan 46958, Korea

Energies, 2020, vol. 13, issue 2, 1-7

Abstract: In this paper, we report the development of Cd-free buffers using atomic layer deposition (ALD) for Cu(In,Ga)(S,Se) 2 -based solar cells. The ALD process gives good control of thickness and the S/S?+O ratio content of the films. The influence of the growth per cycle (GPC) and the S/(S+O) ratio, and the glass temperature of the atomic layer deposited Zn(O,S) buffer layers on the efficiency of the Cu(In,Ga)(S,Se) 2 solar cells were investigated. We present the first results from our work on cadmium-free CIGS solar cells on substrates with an aperture area of 0.4 cm 2 . These Zn(O,S) layers were deposited by atomic layer deposition at 120 °C with S/Zn ratios of 0.7, and layers of around 30 nm. The Zn(O,S) 20% (Pulse Ratio: H 2 S/H 2 O+H 2 S) process results in a S/Zn ratio of 0.7. We achieved independently certified aperture area efficiencies of 17.1% for 0.4 cm 2 cells.

Keywords: Cu(In,Ga)(S,Se) 2 absorber layer; buffer layer; Zn(O,S) temperature window; Zn(O,S) ratio; Zn(O,S) thickness; atomic layer deposition; solar cell (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2020
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