Properties of Thermally Evaporated Titanium Dioxide as an Electron-Selective Contact for Silicon Solar Cells

Changhyun Lee, Soohyun Bae, HyunJung Park, Dongjin Choi, Hoyoung Song, Hyunju Lee, Yoshio Ohshita, Donghwan Kim, Yoonmook Kang and Hae-Seok Lee
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Changhyun Lee: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Soohyun Bae: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
HyunJung Park: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Dongjin Choi: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Hoyoung Song: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Hyunju Lee: Semiconductor Laboratory, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Yoshio Ohshita: Semiconductor Laboratory, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Donghwan Kim: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Yoonmook Kang: KU-KIST Green School, Graduate School of Energy and Environment, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Hae-Seok Lee: KU-KIST Green School, Graduate School of Energy and Environment, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea

Energies, 2020, vol. 13, issue 3, 1-10

Abstract: Recently, titanium oxide has been widely investigated as a carrier-selective contact material for silicon solar cells. Herein, titanium oxide films were fabricated via simple deposition methods involving thermal evaporation and oxidation. This study focuses on characterizing an electron-selective passivated contact layer with this oxidized method. Subsequently, the SiO 2 /TiO 2 stack was examined using high-resolution transmission electron microscopy. The phase and chemical composition of the titanium oxide films were analyzed using X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The passivation quality of each layer was confirmed by measuring the carrier lifetime using quasi-steady-state photoconductance, providing an implied open circuit voltage of 644 mV. UV–vis spectroscopy and UV photoelectron spectroscopy analyses demonstrated the band alignment and carrier selectivity of the TiO 2 layers. Band offsets of ~0.33 and ~2.6 eV relative to the conduction and valence bands, respectively, were confirmed for titanium oxide and the silicon interface.

Keywords: carrier-selective contact cell; electron-selective contact; titanium oxide; band alignment (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2020
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (2)

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