GaN-based Matrix Converter Design with Output Filters for Motor Friendly Drive System
Hanyoung Bu and
Younghoon Cho
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Hanyoung Bu: Department of Electrical Engineering, Konkuk University, Seoul 05029, Korea
Younghoon Cho: Department of Electrical Engineering, Konkuk University, Seoul 05029, Korea
Energies, 2020, vol. 13, issue 4, 1-14
Abstract:
This paper introduces a gallium nitride (GaN) high electron mobility transistor (HEMT)-based matrix converter for motor friendly drive systems. A fast switching characteristic of the GaN devices causes high dv/dt. This increases the importance of noise immunity and the reduction of parasitic components in system design. In addition, the high dv/dt in motor drive systems leads to voltage spike at a motor input terminal and leakage current through a motor chassis. Accordingly, a gate drive circuit consists of devices with a high common mode transient immunity. A printed circuit board was designed to minimize parasitic inductance, which was analyzed by performing simulations. To mitigate the dv/dt of the voltage applied to the motor and the leakage current, a dv/dt filter and a sine-wave filter were utilized as an output filter of the matrix converter. The effectiveness of each filter was verified by driving an induction motor.
Keywords: dv/dt; GaN HEMT; gate driver; parasitic inductance; matrix converter; dv/dt filter; sine-wave filter; leakage current (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2020
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)
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