Numerical Study of 4H-SiC UMOSFETs with Split-Gate and P+ Shielding

Jheng-Yi Jiang, Tian-Li Wu, Feng Zhao and Chih-Fang Huang
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Jheng-Yi Jiang: Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
Tian-Li Wu: International College of Semiconductor Technology, National Chiao Tung University, Hsinchu 30010, Taiwan
Feng Zhao: School of Engineering and Computer Science, Washington State University, Vancouver, WA 98686, USA
Chih-Fang Huang: Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

Energies, 2020, vol. 13, issue 5, 1-10

Abstract: In this paper, performances of a 4H-SiC UMOSFET with split gate and P+ shielding in different configurations are simulated and compared, with an emphasis on the switching characteristics and short circuit capability. A novel structure with the split gate in touch with the P+ shielding is proposed. The key design issues for 4H-SiC UMOSFETs are trench gate dielectric protection and reverse transfer capacitance Crss reduction. Based on simulation results, it is concluded that a UMOSFET with a gate structure combining split gate grounded to the trench bottom protection P+ shielding layer and a current spreading layer is achieved to yield the best compromise between conduction, switching, and short circuit performance. The split-gate design can effectively reduce Crss by shielding the coupling between the gate electrode and the drain region. The P+ shielding design not only protects the oxide at trench bottom corners but also minimizes the short channel effect due to drain-induced barrier lowing and the channel length modulation. Trade-off of the doping concentration of current spreading layer for UMOSFET is also discussed. A heavily doped current spreading layer may increase Crss and influence the switching time, even though R ON,SP is reduced.

Keywords: silicon carbide; UMOSFETs; split gate; P+ shielding; current spreading layer (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2020
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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