Broadband Circuit-Oriented Electromagnetic Modeling for Power Electronics: 3-D PEEC Solver vs. RLCG-Solver

Ivana Kovacevic-Badstuebner, Daniele Romano, Giulio Antonini, Jonas Ekman and Ulrike Grossner
Additional contact information
Ivana Kovacevic-Badstuebner: Advanced Power Semiconductor Laboratory, ETH Zurich, 8092 Zurich, Switzerland
Daniele Romano: UAq EMC Laboratory, Università degli Studi dell’Aquila, 67100 L’Aquila, Italy
Giulio Antonini: UAq EMC Laboratory, Università degli Studi dell’Aquila, 67100 L’Aquila, Italy
Jonas Ekman: Department of Computer Science, Electrical and Space Engineering, Luleå University of Technology, SE-971 87 Luleå, Sweden
Ulrike Grossner: Advanced Power Semiconductor Laboratory, ETH Zurich, 8092 Zurich, Switzerland

Energies, 2021, vol. 14, issue 10, 1-16

Abstract: Broadband electromagnetic (EM) modeling increases in importance for virtual prototyping of advanced power electronics systems (PES), enabling a more accurate prediction of fast switching converter operation and its impact on energy conversion efficiency and EM interference. With the aim to predict and reduce an adverse impact of parasitics on the dynamic performance of fast switching power semiconductor devices, the circuit-oriented EM modeling based on the extraction of equivalent lumped R-L-C-G circuits is frequently selected over the Finite Element Method (FEM)-based EM modeling, mainly due to its lower computational complexity. With requirements for more accurate virtual prototyping of fast-switching PES, the modeling accuracy of the equivalent-RLCG-circuit-based EM modeling has to be re-evaluated. In the literature, the equivalent-RLCG-circuit-based EM techniques are frequently misinterpreted as the quasi-static (QS) 3-D Partial Element Equivalent Circuit (PEEC) method, and the observed inaccuracies of modeling HF effects are attributed to the QS field assumption. This paper presents a comprehensive analysis on the differences between the QS 3-D PEEC-based and the equivalent-RLCG-circuit-based EM modeling for simulating the dynamics of fast switching power devices. Using two modeling examples of fast switching power MOSFETs, a 3-D PEEC solver developed in-house and the well-known equivalent-RLCG-circuit-based EM modeling tool, ANSYS Q3D, are compared to the full-wave 3-D FEM-based EM tool, ANSYS HFSS. It is shown that the QS 3-D PEEC method can model the fast switching transients more accurately than Q3D. Accordingly, the accuracy of equivalent-RLCG-circuit-based modeling approaches in the HF range is rather related to the approximations made on modeling electric-field induced effects than to the QS field assumption.

Keywords: partial element equivalent circuit; finite element method; quasi-static electromagnetic modeling; fast switching power semiconductor devices (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.mdpi.com/1996-1073/14/10/2835/pdf (application/pdf)
https://www.mdpi.com/1996-1073/14/10/2835/ (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:gam:jeners:v:14:y:2021:i:10:p:2835-:d:555021

Access Statistics for this article

Energies is currently edited by Ms. Agatha Cao

More articles in Energies from MDPI
Bibliographic data for series maintained by MDPI Indexing Manager ().