Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

Nedal Al Taradeh, Eric Frayssinet, Christophe Rodriguez, Frederic Morancho, Camille Sonneville, Luong-Viet Phung, Ali Soltani, Florian Tendille, Yvon Cordier and Hassan Maher
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Nedal Al Taradeh: Laboratoire Nanotechnologies Nanosystèmes, CNRS UMI-3463, 3IT, Université de Sherbrooke, Sherbrooke, QC J1K OA5, Canada
Eric Frayssinet: University Côte d’Azur, CNRS (Centre National de la Recherche Scientifique), CRHEA (Centre de Re-cherche sur l’Hétéro-Epitaxie et ses Applications), rue Bernard Grégory, 06560 Valbonne, France
Christophe Rodriguez: Laboratoire Nanotechnologies Nanosystèmes, CNRS UMI-3463, 3IT, Université de Sherbrooke, Sherbrooke, QC J1K OA5, Canada
Frederic Morancho: Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS-CNRS), Université de Toulouse, CNRS, Av du Colonel Roche, BP 54200, 31031 Toulouse, France
Camille Sonneville: INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, 69621 Villeurbanne, France
Luong-Viet Phung: INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, 69621 Villeurbanne, France
Ali Soltani: Laboratoire Nanotechnologies Nanosystèmes, CNRS UMI-3463, 3IT, Université de Sherbrooke, Sherbrooke, QC J1K OA5, Canada
Florian Tendille: Saint-Gobain, 12 Place de l’Iris, 92400 Courbevoie, France
Yvon Cordier: University Côte d’Azur, CNRS (Centre National de la Recherche Scientifique), CRHEA (Centre de Re-cherche sur l’Hétéro-Epitaxie et ses Applications), rue Bernard Grégory, 06560 Valbonne, France
Hassan Maher: Laboratoire Nanotechnologies Nanosystèmes, CNRS UMI-3463, 3IT, Université de Sherbrooke, Sherbrooke, QC J1K OA5, Canada

Energies, 2021, vol. 14, issue 14, 1-10

Abstract: This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET toward a straight and smooth channel sidewall. Consequently, the GaN wet etching in the TMAH solution is detailed; we found that the m-GaN plane has lower surface roughness than crystallographic planes with other orientations, including the a-GaN plane. The grooves and slope (Cuboids) at the channel base are also investigated. The agitation does not assist in Cuboid removal or crystallographic planes etching rate enhancement. Finally, the impact of UV light on m and a-GaN crystal plane etching rates in TMAH has been studied with and without UV light. Accordingly, it is found that the m-GaN plane etching rate is enhanced from 0.69 to 1.09 nm/min with UV light; in the case of a-GaN plane etching, UV light enhances the etching rate from 2.94 to 4.69 nm/min.

Keywords: vertical GaN FinFET; GaN etching; UV light; Tetramethylammonium hydroxide (TMAH); ICP-RIE dry etching; channel sidewall engineering (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
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