Wideband Modeling of DC-DC Buck Converter with GaN Transistors

Piotr Musznicki, Pawel B. Derkacz and Piotr J. Chrzan
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Piotr Musznicki: Faculty of Electrical and Control Engineering, Gdańsk University of Technology, str. Gabriela Narutowicza 11/12, 80-233 Gdańsk, Poland
Pawel B. Derkacz: Faculty of Electrical and Control Engineering, Gdańsk University of Technology, str. Gabriela Narutowicza 11/12, 80-233 Gdańsk, Poland
Piotr J. Chrzan: Faculty of Electrical and Control Engineering, Gdańsk University of Technology, str. Gabriela Narutowicza 11/12, 80-233 Gdańsk, Poland

Energies, 2021, vol. 14, issue 15, 1-12

Abstract: The general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model of the converter is reduced to obtain one lumped inductance of the input filter PCB for the analytical prediction of transistor turn-off ringing frequency and overvoltage. The practical use of the model is presented for sizing optimal capacitance of snubber.

Keywords: wideband modeling; converter modeling; DC-DC converter; GaN HEMT; PEEC (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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