Fabrication of Silicon Nanowire Metal-Oxide-Semiconductor Capacitors with Al 2 O 3 /TiO 2 /Al 2 O 3 Stacked Dielectric Films for the Application to Energy Storage Devices

Ryota Nezasa, Kazuhiro Gotoh, Shinya Kato, Satoru Miyamoto, Noritaka Usami and Yasuyoshi Kurokawa
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Ryota Nezasa: Department of Materials Process Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Kazuhiro Gotoh: Department of Materials Process Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Shinya Kato: Department of Electrical and Mechanical Engineering, Graduate School of Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan
Satoru Miyamoto: Department of Materials Process Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Noritaka Usami: Department of Materials Process Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Yasuyoshi Kurokawa: Department of Materials Process Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

Energies, 2021, vol. 14, issue 15, 1-14

Abstract: Silicon nanowire (SiNW) metal-oxide-semiconductor (MOS) capacitors with Al 2 O 3 /TiO 2 /Al 2 O 3 (ATA) stacked dielectric films were fabricated by metal-assisted chemical etching (MACE) and atomic layer deposition (ALD). High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) images revealed that SiNWs were conformally coated with ATA although the cross-sectional shapes of MACE-SiNWs were non-uniform and sharp spikes can be seen locally. The dielectric capacitance density of 5.9 μF/cm 2 at V = −4 V of the perfect accumulation region was achieved due to the combination of the large surface area of the SiNW array and the high dielectric constant of ATA. The capacitance changed exponentially with the voltage at V < −4.3 V and the capacitance of 84 μF/cm 2 was successfully achieved at V = −10 V. It was revealed that not only 3D structure and high- k material but also local nanostructure of SiNWs and stacked dielectric layers could contribute to the considerable high capacitance.

Keywords: silicon nanowire; energy storage device; metal assisted chemical etching; atomic layer deposition (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
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