Characterization of Potential-Induced Degradation and Recovery in CIGS Solar Cells

Solhee Lee, Soohyun Bae, Se Jin Park, Jihye Gwak, JaeHo Yun, Yoonmook Kang, Donghwan Kim, Young-Joo Eo and Hae-Seok Lee
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Solhee Lee: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Soohyun Bae: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Se Jin Park: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Jihye Gwak: Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea
JaeHo Yun: Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea
Yoonmook Kang: Graduate School of Energy and Environment (KU-KIST Green School), Korea University, Seoul 02841, Korea
Donghwan Kim: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Young-Joo Eo: Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea
Hae-Seok Lee: Graduate School of Energy and Environment (KU-KIST Green School), Korea University, Seoul 02841, Korea

Energies, 2021, vol. 14, issue 15, 1-12

Abstract: The potential-induced degradation (PID) mechanism in Cu(In,Ga)(Se,S) 2 (CIGS) thin-film solar cells, which are alternative energy sources with a high efficiency (>23%) and upscaling possibilities, remains unclear. Therefore, the cause of PID in CIGS solar cells was investigated in this study at the cell level. First, an appropriate PID experiment structure at the cell level was determined. Subsequently, PID and recovery tests were conducted to confirm the PID phenomenon. Light current–voltage (I–V), dark I–V, and external quantum efficiency (EQE) analyses were conducted to determine changes in the cell characteristics. In addition, capacitance–voltage (C–V) measurements were carried out to determine the doping concentration and width of the space charge region (SCR). Based on the results, the causes of PID and recovery of CIGS solar cells were explored, and it was found that PID occurs due to changes in the bulk doping concentration and built-in potential at the junction. Furthermore, by distinguishing the effects of temperature and voltage, it was found that PID phenomena occurred when potential difference was involved.

Keywords: solar cell; potential-induced degradation; photovoltaics; recovery; CIGS solar cells (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
References: View complete reference list from CitEc
Citations: View citations in EconPapers (3)

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