Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

Ciro Scognamillo, Antonio Pio Catalano, Michele Riccio, Vincenzo d’Alessandro, Lorenzo Codecasa, Alessandro Borghese, Ravi Nath Tripathi, Alberto Castellazzi, Giovanni Breglio and Andrea Irace
Additional contact information
Ciro Scognamillo: Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy
Antonio Pio Catalano: Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy
Michele Riccio: Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy
Vincenzo d’Alessandro: Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy
Lorenzo Codecasa: Department of Electronics, Information and Bioengineering, Politecnico di Milano, 20133 Milan, Italy
Alessandro Borghese: Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy
Ravi Nath Tripathi: SP2-Lab, Faculty of Engineering, Kyoto University of Advanced Science, Kyoto 6168577, Japan
Alberto Castellazzi: SP2-Lab, Faculty of Engineering, Kyoto University of Advanced Science, Kyoto 6168577, Japan
Giovanni Breglio: Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy
Andrea Irace: Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy

Energies, 2021, vol. 14, issue 15, 1-17

Abstract: In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology.

Keywords: electrothermal simulations; nonlinear thermal effects; parasitics; power module; silicon carbide (SiC) MOSFETs; SPICE modeling (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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