Analysis of Hybrid Hetero-Homo Junction Lead-Free Perovskite Solar Cells by SCAPS Simulator

Marwa. S. Salem, Ahmed Shaker, Abdelhalim Zekry, Mohamed Abouelatta, Adwan Alanazi, Mohammad T. Alshammari and Christian Gontand
Additional contact information
Marwa. S. Salem: Department of Computer Engineering, Computer Science and Engineering College, University of Ha’il, Ha’il 55211, Saudi Arabia
Ahmed Shaker: Department of Engineering Physics and Mathematics, Faculty of Engineering, Ain Shams University, Cairo 11566, Egypt
Abdelhalim Zekry: Department of Electronics and Communications, Faculty of Engineering, Ain Shams University, Cairo 11566, Egypt
Mohamed Abouelatta: Department of Electronics and Communications, Faculty of Engineering, Ain Shams University, Cairo 11566, Egypt
Adwan Alanazi: Department of Computer Science and Information, Computer Science and Engineering College, University of Ha’il, Ha’il 55211, Saudi Arabia
Mohammad T. Alshammari: Department of Computer Science and Information, Computer Science and Engineering College, University of Ha’il, Ha’il 55211, Saudi Arabia
Christian Gontand: INSA–Lyon, Villeurbanne, 69621 Lyon, France

Energies, 2021, vol. 14, issue 18, 1-22

Abstract: In this work, we report on the effect of substituting the active intrinsic i-layer on a conventional pin structure of lead-free perovskite solar cell (PSC) by a homo p-n junction, keeping the thickness of the active layer constant. It is expected that when the active i-layer is substituted by a p-n homo junction, one can increase the collection efficiency of the photo-generated electrons and holes due to the built-in electric field of the homo junction. The impact of the technological and physical device parameters on the performance parameters of the solar cell have been worked out. It was found that p-side thickness must be wider than the n-side, while its acceptor concentration should be slightly lower than the donor concentration of the n-side to achieve maximum efficiency. In addition, different absorber types, namely, i-absorber, n-absorber and p-absorber, are compared to the proposed pn-absorber, showing a performance-boosting effect when using the latter. Moreover, the proposed structure is made without a hole transport layer (HTL) to avoid the organic issues of the HTL materials. The back metal work function, bulk trap density and ETL material are optimized for best performance of the HTL-free structure, giving J sc = 26.48, V oc = 0.948 V, FF = 77.20 and PCE = 19.37% for AM1.5 solar spectra. Such results highlight the prospective of the proposed structure and emphasize the importance of using HTL-free solar cells without deteriorating the efficiency. The solar cell is investigated by using SCAPS simulator.

Keywords: lead-free; perovskite solar cell; homo p-n junction; HTL-free cells; SCAPS simulator (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (5)

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