Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Chih-Chiang Wu, Ching-Yao Liu, Sandeep Anand, Wei-Hua Chieng, Edward-Yi Chang and Arnab Sarkar
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Chih-Chiang Wu: Mechanical and Mechatronics Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan
Ching-Yao Liu: Department of Mechanical Engineering, College of Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Sandeep Anand: Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
Wei-Hua Chieng: Department of Mechanical Engineering, College of Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Edward-Yi Chang: Department of Material Science and Engineering College of Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Arnab Sarkar: Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India

Energies, 2021, vol. 14, issue 18, 1-26

Abstract: The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns. This is because of the possibility of the gate to source voltage of the GaN HEMT surging to a negative voltage during the turn off transition. The existing solutions for this problem in the literature produce additional drawbacks such as reducing the switching frequency or introducing many additional components. These drawbacks may outweigh the advantages of using a GaN HEMT over its silicon (Si) alternative. This paper proposes two innovative gate drive circuits for D-mode GaN HEMTs—namely the GaN-switching based cascode GaN HEMT and the modified GaN-switching based cascode GaN HEMT. In these schemes, the Si MOSFET in series with the D-mode GaN HEMT is always turned on during regular operation. The GaN HEMT is then switched on and off by using a charge pump based circuit and a conventional gate driver. Since the GaN HEMT is driven independently, the highly negative gate-to-source voltage surge during turn off is avoided, and in addition, high switching frequency operation is made possible. Only two diodes and one capacitor are used in each of the schemes. The application of the proposed circuits is experimentally demonstrated in a high voltage flyback converter, where more than 96% efficiency is obtained for 60 W output load.

Keywords: cascade; flyback converter; GaN; gate driver; E-mode (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (4)

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