Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures

Weidong Zhang, Tyler A. Growden, Paul R. Berger, David F. Storm, David J. Meyer and Elliott R. Brown
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Weidong Zhang: Departments of Physics and Electrical Engineering, Wright State University, Dayton, OH 45435, USA
Tyler A. Growden: U.S. Naval Research Laboratory, Washington, DC 20375, USA
Paul R. Berger: Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
David F. Storm: U.S. Naval Research Laboratory, Washington, DC 20375, USA
David J. Meyer: U.S. Naval Research Laboratory, Washington, DC 20375, USA
Elliott R. Brown: Departments of Physics and Electrical Engineering, Wright State University, Dayton, OH 45435, USA

Energies, 2021, vol. 14, issue 20, 1-8

Abstract: An electroluminescence (EL) phenomenon in unipolar-doped GaN/AlN/GaN double-barrier heterostructures—without any p-type contacts—was investigated from 4.2 K to 300 K. In the range of 200–300 K, the extracted peak photon energies agree with the Monemar formula. In the range of 30 to 200 K, the photon energies are consistent with A-exciton emission. At 4.2 K, the exciton type likely transforms into B-exciton. These studies confirm that the EL emission comes from a cross-bandgap (or band-to-band) electron-hole radiative recombination and is excitonic. The excitons are formed by the holes generated through interband tunneling and the electrons injected into the GaN emitter region of the GaN/AlN heterostructure devices.

Keywords: GaN/AlN; electroluminescence; unipolar; holes; interband tunneling; exciton emission; A exciton; B exciton (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
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