Design and Modelling of Eco-Friendly CH 3 NH 3 SnI 3 -Based Perovskite Solar Cells with Suitable Transport Layers

M. Mottakin, K. Sobayel, Dilip Sarkar, Hend Alkhammash, Sami Alharthi, Kuaanan Techato, Md. Shahiduzzaman, Nowshad Amin, Kamaruzzaman Sopian and Md. Akhtaruzzaman
Additional contact information
M. Mottakin: Department of Applied Chemistry and Chemical Engineering, Bangabandhu Sheikh Mujibur Rahman Science and Technology University, Gopalganj 8100, Bangladesh
K. Sobayel: Solar Energy Research Institute, The National University of Malaysia, Bangi 43600, Malaysia
Dilip Sarkar: Solar Energy Research Institute, The National University of Malaysia, Bangi 43600, Malaysia
Hend Alkhammash: Department of Electrical Engineering, College of Engineering, Taif University, Taif 21944, Saudi Arabia
Sami Alharthi: Department of Physics, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia
Kuaanan Techato: Environmental Assessment and Technology for Hazardous Waste Management Research Centre, Faculty of Environmental Management, Prince of Songkla University, Songkhla 90110, Thailand
Md. Shahiduzzaman: Graduate School of Natural Science and Technology, Kanazawa University, Kakuma, Kanazawa 920-1292, Japan
Nowshad Amin: Institute of Sustainable Energy, Universiti Tenaga Nasional (The National Energy University), Jalan IKRAM-UNITEN, Kajang 43000, Malaysia
Kamaruzzaman Sopian: Solar Energy Research Institute, The National University of Malaysia, Bangi 43600, Malaysia
Md. Akhtaruzzaman: Solar Energy Research Institute, The National University of Malaysia, Bangi 43600, Malaysia

Energies, 2021, vol. 14, issue 21, 1-16

Abstract: An ideal n-i-p perovskite solar cell employing a Pb free CH 3 NH 3 SnI 3 absorber layer was suggested and modelled. A comparative study for different electron transport materials has been performed for three devices keeping CuO hole transport material (HTL) constant. SCAPS-1D numerical simulator is used to quantify the effects of amphoteric defect based on CH 3 NH 3 SnI 3 absorber layer and the interface characteristics of both the electron transport layer (ETL) and hole transport layer (HTL). The study demonstrates that amphoteric defects in the absorber layer impact device performance significantly more than interface defects (IDL). The cell performed best at room temperature. Due to a reduction in V oc , PCE decreases with temperature. Defect tolerance limit for IL1 is 10 13 cm −3 , 10 16 cm −3 and 10 12 cm −3 for structures 1, 2 and 3 respectively. The defect tolerance limit for IL2 is 10 14 cm −3 . With the proposed device structure FTO/PCBM/CH 3 NH 3 SnI 3 /CuO shows the maximum efficiency of 25.45% (V oc = 0.97 V, J sc = 35.19 mA/cm 2 , FF = 74.38%), for the structure FTO/TiO 2 /CH 3 NH 3 SnI 3 /CuO the best PCE is obtained 26.92% (V oc = 0.99 V, J sc = 36.81 mA/cm 2 , FF = 73.80%) and device structure of FTO/WO 3 /CH 3 NH 3 SnI 3 /CuO gives the maximum efficiency 24.57% (V oc = 0.90 V, J sc = 36.73 mA/cm 2 , FF = 74.93%) under optimum conditions. Compared to others, the FTO/TiO 2 /CH 3 NH 3 SnI 3 /CuO system provides better performance and better defect tolerance capacity.

Keywords: CH 3 NH 3 SnI 3; CuO; HTL; WO 3; perovskite; SCAPS-1D (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

Downloads: (external link)
https://www.mdpi.com/1996-1073/14/21/7200/pdf (application/pdf)
https://www.mdpi.com/1996-1073/14/21/7200/ (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:gam:jeners:v:14:y:2021:i:21:p:7200-:d:670404

Access Statistics for this article

Energies is currently edited by Ms. Agatha Cao

More articles in Energies from MDPI
Bibliographic data for series maintained by MDPI Indexing Manager ().